rej03g1668-0200 rev.2.00 dec 10, 2009 page 1 of 1 hs54095 silicon n channel mos fet high speed power switching rej03g1668-0200 rev.2.00 dec 10, 2009 features ? low on-resistance r ds(on) = 13.5 typ. (at i d = 0.1 a, v gs = 10 v, ta = 25 c) ? low drive current ? high density mounting outline renesas package code: prss0003da-a (package name: to-92(1)) 1. gate 2. drain 3. source 3 2 1 d s g absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 600 v gate to source voltage v gss 30 v drain current i d 0.2 a drain peak current i d (pulse) note1 0.8 a body-drain diode reverse drain current i dr 0.2 a body-drain diode reverse drain peak current i dr (pulse) note1 0.8 a channel dissipation pch 0.75 w channel to ambient thermal impedance ch-a 166.7 c/w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1%
hs54095 rej03g1668-0200 rev.2.00 dec 10, 2009 page 2 of 2 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 600 ? ? v i d = 10 ma, v gs = 0 zero gate voltage drain current i dss ? ? 1 a v ds = 600 v, v gs = 0 gate to source leak current i gss ? ? 0.1 a v gs = 30 v, v ds = 0 gate to source cutoff voltage v gs(off) 3 ? 5 v v ds = 10 v, i d = 1 ma static drain to source on state resistance r ds(on) ? 13.5 16.5 i d = 0.1 a, v gs = 10 v note2 input capacitance ciss ? 66 ? pf output capacitance coss ? 8.7 ? pf reverse transfer capacitance crss ? 1.3 ? pf v ds = 25 v v gs = 0 f = 1 mhz turn-on delay time t d(on) ? 30 ? ns rise time t r ? 15 ? ns turn-off delay time t d(off) ? 51 ? ns fall time t f ? 175 ? ns i d = 0.1 a v gs = 10 v r l = 3000 rg = 10 total gate charge qg ? 4.8 ? nc gate to source charge qgs ? 0.6 ? nc gate to drain charge qgd ? 3.2 ? nc v dd = 480 v v gs = 10 v i d = 0.2 a body-drain diode forward voltage v df ? 0.77 1.30 v i f = 0.2 a, v gs = 0 note2 body-drain diode reverse recovery time t rr ? 220 ? ns i f = 0.2 a, v gs = 0 di f /dt = 50 a/ s notes: 2. pulse test 3. since this device is equipped with high voltage fet chip (v dss 600 v), high voltage may be supplied. therefore, please be sure to confirm about electr ic discharge between drain terminal and other terminal. 4. this device is sensitive to electrostatic discharge. it is recommended to adopt appropriate cautions when handling this product.
hs54095 rej03g1668-0200 rev.2.00 dec 10, 2009 page 3 of 3 main characteristics 0.8 0.6 0.4 0.2 0 0 4 8 12 16 20 drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics 0.01 1 0.1 10 100 1 drain current i d (a) drain to source on state resistance r ds(on) ( ) static drain to source on state resistance vs. drain current (typical) drain to source voltage v ds (v) drain current i d (a) maximum safe operation area case temperature tc ( c) static drain to source on state resistance r ds(on) ( ) static drain to source on state resistance vs. temperature (typical) 234 6 5 0 10 20 30 40 -25 0 50 25 75 100 125 150 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 0.1 0.3 1 1000 100 10 reverse drain current i dr (a) reverse recovery time t rr (ns) body-drain diode reverse recovery time (typical) di / dt = 50 a / s v gs = 0, ta = 25 c v gs = 10 v pulse test i d = 0.4 a ? 25 c tc = 75 c 25 c v gs = 10 v ta = 25 c pulse test 0.1 a 3.8 v 4.2 v 4.4 v 4.6 v 3.6v v g s = 3.4 v 4 v ta = 25 c pulse test ta = 25 c 1 shot operation in this area is limited by r ds(on) 10 s pw = 100 s 5 v 10 v 1 0.1 0.01 0.001 v ds = 10 v pulse test 0.2 a
hs54095 rej03g1668-0200 rev.2.00 dec 10, 2009 page 4 of 4 800 0 16 600 12 400 8 200 0 4 24 6810 0 capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics (typical) 0 0.4 0.8 1.2 1.6 2.0 0.4 source to drain voltage v sd (v) reverse drain current vs. source to drain voltage (typical) reverse drain current i dr (a) case temperature tc ( c) gate to source cutoff voltage vs. case temperature (typical) gate to source cutoff voltage v gs(off) (v) 0.2 0 0.6 0.8 0 5 -25 0 25 50 75 100 125 150 2 1 3 4 v ds v gs v dd = 480 v 300 v 100 v v dd = 480 v 300 v 100 v v ds = 10 v 1 ma 0.1 ma i d = 0.2 a ta = 25 c v gs = 0 ta = 25 c pulse test 0 100 200 300 1000 10 100 0.1 1 v gs = 0 f = 1 mhz ta = 25 c ciss coss crss i d = 10 ma
hs54095 rej03g1668-0200 rev.2.00 dec 10, 2009 page 5 of 5 vin monitor d.u.t. vin 10 v r l v = 300 v dd tr td(on) vin 90% 90% 10% 10% vout td(off) vout monitor 10 90% 10% t f switching time test circuit waveform 0.3 0.1 0.03 0.01 3 1 10 100 1 m 10 m 100 m 1 1000 100 10 pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width dm p pw t d = pw t ch ? a(t) = s (t) ? ch ? a ch ? a = 166.7 c/w, ta = 25 c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse
hs54095 rej03g1668-0200 rev.2.00 dec 10, 2009 page 6 of 6 package dimensions 0.60 max 0.55 max 4.8 0.3 3.8 0.3 5.0 0.2 0.7 2.3 max 12.7 min 0.5 max 1.27 2.54 previous code prss0003da-a to-92(1) / to-92(1)v mass[typ.] 0.25g sc-43a renesas code jeita package code unit: mm package name to-92(1) since hs54095 is equipped with high voltage fet chip (v dss 600 v), high voltage may be supplied. therefore, please be sure to confirm about electr ic discharge between drain terminal and other terminal. ordering information part no. quantity shipping container HS54095TZ-E 2500 pcs hold box, radial taping note: leads is forming app lied as following figure. 12.7 24.7 max. 19.0 16.0 18.0 9.0 6.35 4.0 12.7 2.5 2.5 unit: mm
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